IPA093N06N3 G datasheet

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• Маркировка
  IPA093N06N3 G
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPA093N06N3 G Configuration: Single Continuous Drain Current: 43 A Drain-source Breakdown Voltage: 60 V Factory Pack Quantity: 500 Fall Time: 5 ns Forward Transconductance Gfs (max / Min): 51 S Gate Charge Qg: 36 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: PG-TO220-3 FullPAK Part # Aliases: IPA093N06N3GXK IPA093N06N3GXKSA1 SP000451088 Power Dissipation: 33 W Product Category: MOSFET Resistance Drain-source Rds (on): 9.3 mOhms Rise Time: 40 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 20 ns RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 9.3 mOhms Forward Transconductance gFS (Max / Min): 51 S Typical Turn-Off Delay Time: 20 ns
• Количество страниц
  9 шт.
• Формат
  PDF

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• Размер файла
  576,06 KB

IPA093N06N3 G datasheet скачать

IPA093N06N3 G datasheet